Precision Machined Aluminum Nitride (AlN) Components
Custom manufacturing of high-thermal grade Aluminum Nitride components. Maximizing heat dissipation (≥170 W/m·K) while ensuring absolute electrical insulation and Silicon CTE matching.
Strategic Manufacturing Advantage
Our factory provides precise dimensional controls down to ±0.003 mm for AlN substrates and components, enabling flawless thermal integration into next-gen AI hardware and GPU packaging.
Key Material Properties
Quantitative engineering data for design validation and material selection
Why Choose Aluminum Nitride?
AlN is the premier choice for thermal management in high-power electronics:
- Silicon-Matched CTE: Thermal expansion coefficient (4.3 - 4.6 x10⁻⁶/K) perfectly matches silicon wafers, eliminating thermal stress-induced delamination in power module packaging.
- Metal-Like Thermal Conductivity: 170-190 W/m·K rivals copper and aluminum while maintaining complete electrical insulation (>10¹⁴ Ω·cm).
- High-Frequency Performance: Low dielectric constant (εr ≈ 8.8) and minimal dielectric loss tangent make AlN ideal for RF and microwave applications.
High-Value Applications
Proven performance in AI hardware, RF wireless, optoelectronics, and semiconductor processing
AI Hardware & Computing Infrastructure
- •High-power GPU/TPU chip carrier submounts
- •Micro-electronic heat sinks
- •Thermal blocks
- •Power module substrates
RF Wireless & Optoelectronics
- •High-frequency RF wireless infrastructure insulators
- •Laser diode submounts
- •Optical transceiver bases
- •Microwave package headers
Semiconductor Wafer Processing
- •Precision heater plates
- •Electrostatic chuck components
- •Plasma chamber insulating tabs
- •Wafer stage mirrors
Typical Mechanical & Thermal Properties
Reference data for High-Thermal Grade AlN at room temperature
| Property | Test Method | Unit | Value |
|---|---|---|---|
| Density | ISO 2738 | g/cm³ | 3.28 |
| Flexural Strength | ISO 14704 | MPa | 310 |
| Young's Modulus | ISO 17561 | GPa | 310 |
| Vickers Hardness | ISO 6507 | HV0.5 | ≥ 1000 |
| Fracture Toughness | ISO 23146 | MPa·m½ | 2.5 - 3.0 |
| Thermal Conductivity | ISO 22007 | W/m·K | 180 |
| Coefficient of Thermal Expansion | ISO 11372 | x10⁻⁶/K | 4.5 |
| Dielectric Strength | IEC 60243 | kV/mm | ≥ 15 |
| Volume Resistivity | IEC 60243 | Ω·cm | > 10¹⁴ |
| Max Service Temperature | Continuous | °C | 1400 |
Precision Machining Capabilities for AlN
Specialized processing for high-thermal substrates and AI hardware components
±0.003 mm Dimensional Control
Ultra-precision grinding and lapping achieving tight tolerances critical for chip carrier flatness and thermal interface contact.
Thin Substrate Processing
Machining of thin AlN substrates (down to 0.3 mm thickness) without fracture, enabled by optimized fixturing and stress-free grinding parameters.
Metallization-Ready Surfaces
Ra 0.05 μm surface quality ensures reliable thick-film or DBC (Direct Bonded Copper) metallization adhesion for power module assembly.
Micro-Via & Through-Hole Drilling
Diamond micro-drilling for thermal vias and electrical feedthroughs down to Ø 0.2 mm with clean edges and minimal chipping.
Large-Format Plate Grinding
Precision surface grinding of large AlN plates (up to 200mm x 200mm) with parallelism ≤ 0.005 mm for uniform thermal distribution.
Complete Traceability Documentation
Full FAI/OQC reports including thermal conductivity verification, dimensional datasheets, and material certificates (MTR/CoC).
Validate Your Aluminum Nitride Component Design with KoreCera
Submit your 2D engineering blueprints or 3D CAD files (.STEP / .IGS) below. Our expert engineering team will conduct an in-depth Design-for-Manufacturability (DFM) review and deliver a competitive direct-factory quote. Fast-track prototyping completed within 7-10 business days. Full FAI, OQC, and material traceability reports provided upon delivery.
100% Strict NDA Protection Enforced