Precision Ceramic Solutions for Semiconductor Manufacturing
Direct-factory precision diamond grinding and micro-machining of high-reliability technical ceramics for wafer processing, advanced lithography stages, and severe plasma etching environments.
Modern semiconductor fabrication exige materials capable of withstanding extreme localized heat densities, highly corrosive reactive ions, and aggressive plasma erosion. KoreCera provides world-class mid-to-backend precision grinding, micro-drilling, and micro-lapping (Ra 0.02) services for custom Alumina (Al₂O₃), Silicon Carbide (SiC), and Silicon Nitride (Si₃N₄) structural components. Our specialized multi-axis CNC grinding setups overcome technical ceramic brittleness to deliver high dimensional repeatability for critical sub-systems—ensuring exceptional plasma-chemical resistance and zero structural warp.
Key Sourcing Capabilities
Class 100/1000 cleanroom compatibility, high-density 99.5% Alumina and precision-ground SiC options, outstanding fluorine/chlorine plasma etch resistance, Ultrasonic Deionized (DI) Water cleaning, and strict ±0.003 mm linear tolerances.
Critical Applications
Precision-machined ceramic components for semiconductor fab equipment
Wafer Handling & Mechanical Transport
Precision-Ground Ceramic Robot End-Effectors (Arms), Ultra-Flat Wafer Processing Carriers, High-Wear Ceramic Alignment Positioning Pins, and Fine-Pitch Custom Robot Grippers.
Front-End Process Chamber Sub-systems
Precision-Machined Sintered SiC Susceptors, Multi-Axis Ground Ceramic Edge Rings, Sub-Micron Hole Drilled Gas Showerheads, and High-Dielectric Gas Vacuum Isolation Rings.
High-Erosion Plasma-Resistant Components
Fluorine/Chlorine Plasma Resistant Etch Chamber Liners, Ultra-Smooth Plasma Shields, High-Voltage Electrostatic Chuck (ESC) Dielectric Base Ceramic Rings, and High-Purity Vacuum Chamber Feedthrough Structural Insulators.
High-Density Thermal Management Hardware
High-Thermal Aluminum Nitride (AlN ≥ 170 W/m·K) Substrates, High-Power GPU/TPU Computing Module Insulating Bases, Sub-Micron Flatness Laser Diode Submounts, and Ra 0.02 Mirror-Polished Cooling Plates.
Material Selection Matrix
Quantitative guide for semiconductor component material selection
| Application | Recommended Material | Key Properties |
|---|---|---|
| Wafer handling robot arms & end effectors | High-Density Alumina (95% - 99.5% Al₂O₃) | High mechanical rigidity, low particle generation, and strict dimensional stability under rapid handling automation. |
| Chamber susceptors & heater blocks | High-Thermal Aluminum Nitride (AlN ≥ 170 W/m·K) | Superior thermal conductivity for rapid heat dissipation, excellent electrical insulation, and Silicon wafer CTE matching. |
| Plasma etch chamber focus rings & liners | Precision-Ground Silicon Carbide (Sintered SiC) | Extreme mechanical hardness (HV > 2000), superior resistance to fluorine/chlorine reactive ions, and zero structural warp. |
| Electrostatic chuck (ESC) base rings | Doped Insulating Technical Ceramics | Precise volume resistivity control, high dielectric breakdown voltage, and excellent thermal shock stability. |
| RF windows & vacuum feedthrough isolators | High-Purity Alumina (99.5% Dense Grade) | Ultra-low dielectric loss at high frequencies, gas-tight vacuum reliability, and high volumetric resistivity. |
Validate Your Industry-Specific Ceramic Component Blueprint
Ready to submit your engineering drawings for factory-direct evaluation? Upload your 2D blueprints or 3D CAD files (.STEP / .IGS) right below. Our Dongguan tech team will conduct an extensive design-for-manufacturability (DFM) review and output an accurate, competitive factory quote within 24 hours. Regular sample prototyping completed in 7-10 business days with full FAI/OQC reports. 🔒 100% Strict NDA Protection Legally Guaranteed.